?2002 fairchild semiconductor corporation sgh15n120rufd rev. b2 igbt sgh15n120rufd sgh15n120rufd short circuit rated igbt general description fairchild's rufd series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses as well as short circuit ruggedness. the rufd series is designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? short circuit rated 10 s @ t c = 100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce(sat) = 2.3 v @ i c = 15a ? high input impedance ? co-pak, igbt with frd : t rr = 70ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgh15n120rufd units v ces collector-emitter voltage 1200 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c24 a collector current @ t c = 100 c15 a i cm (1) pulsed collector current 45 a i f diode continuous forward current @ t c = 100 c15 a i fm diode maximum forward current 90 a t sc short circuit withstand time @ t c = 100 c10 s p d maximum power dissipation @ t c = 25 c 180 w maximum power dissipation @ t c = 100 c72 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.69 c / w r jc (diode) thermal resistance, junction-to-case -- 1.0 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. g c e to-3p g c e g c e
sgh15n120rufd rev. b2 sgh15n120rufd ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 1ma 1200 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 15ma, v ce = v ge 3.5 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 15a , v ge = 15v -- 2.3 3.0 v i c = 24a , v ge = 15v -- 2.8 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1400 -- pf c oes output capacitance -- 135 -- pf c res reverse transfer capacitance -- 45 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 15a, r g = 20 ? , v ge = 15v, inductive load, t c = 25 c -- 20 -- ns t r rise time -- 60 -- ns t d(off) turn-off delay time -- 60 110 ns t f fall time -- 150 300 ns e on turn-on switching loss -- 1.0 -- mj e off turn-off switching loss -- 0.98 -- mj e ts total switching loss -- 1.98 2.8 mj t d(on) turn-on delay time v cc = 600 v, i c = 15a, r g = 20 ? , v ge = 15v, inductive load, t c = 125 c -- 20 -- ns t r rise time -- 70 -- ns t d(off) turn-off delay time -- 80 150 ns t f fall time -- 200 400 ns e on turn-on switching loss -- 1.13 -- mj e off turn-off switching loss -- 1.50 -- mj e ts total switching loss -- 2.63 3.81 mj t sc short circuit withstand time v cc = 600 v, v ge = 15v @ t c = 100 c 10 -- -- s q g total gate charge v ce = 600 v, i c = 15a, v ge = 15v -- 72 108 nc q ge gate-emitter charge -- 10 15 nc q gc gate-collector charge -- 30 45 nc le internal emitter inductance measured 5mm from pkg -- 14 -- nh symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15a t c = 25 c -- 2.9 3.5 v t c = 100 c -- 2.7 -- t rr diode reverse recovery time i f = 15a di/dt = 200 a/ s t c = 25 c -- 70 100 ns t c = 100 c -- 85 -- i rr diode peak reverse recovery current t c = 25 c -- 7.0 9.0 a t c = 100 c -- 8.5 -- q rr diode reverse recovery charge t c = 25 c -- 245 450 nc t c = 100 c -- 360 --
sgh15n120rufd rev. b2 sgh15n120rufd ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 0246810 0 20 40 60 80 100 common emitter t c = 25 20v 17v 15v 12v v ge = 10v collector current, i c [a] collector - emitter voltage, v ce [v] 25 50 75 100 125 150 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 common emitter v ge = 15v i c = 15a 24a collector - emitter voltage, v ce [v] case temperature, t c [ ] 0246810 0 15 30 45 60 75 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] 0 4 8 121620 0 4 8 12 16 20 common emitter t c = 25 30a 15a i c = 8a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 125 30a 15a i c = 8a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0.1 1 10 100 1000 0 10 20 30 duty cycle : 50% t c = 100 power dissipation = 35w v cc = 600v load current : peak of square wave load current [a] frequency [khz]
sgh15n120rufd rev. b2 sgh15n120rufd ?2002 fairchild semiconductor corporation fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 400 800 1200 1600 2000 common emitter v ge = 0v, f = 1mhz t c = 25 cies coes cres capacitance [pf] collector - emitter voltage, v ce [v] 10 100 10 100 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = 125 tr td(on) switching time [ns] gate resistance, r g [ ? ] 10 100 100 1000 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = 125 tf tf td(off) switching time [ns] gate resistance, r g [ ?] 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = 125 eoff eon eoff switching loss [ j] gate resistance, r g [ ? ] 5 1015202530 10 100 common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 tr td(on) switching time [ns] collector current, i c [a] 5 1015202530 100 common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 tf td(off) switching time [ns] collector current, i c [a]
sgh15n120rufd rev. b2 sgh15n120rufd ?2002 fairchild semiconductor corporation fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa fig 17. transient thermal impedance of igbt fig 13. switching loss vs. collector current 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] 1 10 100 1000 1 10 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector - emitter voltage, v ce [v] 5 1015202530 100 1000 common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 eoff eon eoff switching loss [ j] collector current, i c [a] 0 1020304050607080 0 2 4 6 8 10 12 14 16 common emitter r l = 40 ? t c = 25 600v 400v v cc = 200v gate - emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50 s 100 s 1ms dc operation i c max. (pulsed) i c max. (continuous) collector current, i c [a] collector - emitter voltage, v ce [v] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
sgh15n120rufd rev. b2 sgh15n120rufd ?2002 fairchild semiconductor corporation fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time 100 500 0 100 200 300 400 500 600 700 800 v r = 200v i f = 15a t c = 25 t c = 100 stored recovery charge, q rr [nc] di/dt [a/ s] 0.1 1 10 100 0246 t c = 25 t c = 100 forward voltage drop, v fm [v] forward current, i f [a] 100 500 0 2 4 6 8 10 12 14 16 18 20 v r = 200v i f = 15a t c = 25 t c = 100 reverse recovery current, i rr [a] di/dt [a/ s] 100 500 40 60 80 100 120 140 v r = 200v i f = 15a t c = 25 t c = 100 reverse reconvery time, t rr [ns] di/dt [a/ s]
?2002 fairchild semiconductor corporation sgh15n120rufd rev. b2 sgh15n120rufd package dimension 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?.05 0.60 +0.15 ?.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p (fs pkg code af) dimensions in millimeters
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product folder - fairchild p/n sgh15n120rufd - discrete, short circuit rated igbt with diode fairchild semiconductor space space space search | parametric | cross reference | inventory space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgh15n120rufd discrete, short circuit rated igbt with diode related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging general description fairchild's insulated gate bipolar transistor(igbt) rufd series provides low conduction and switching losses as well as short circuit ruggedness. rufd series is designed for the applications such as motor control, ups and general inverters where short- circuit ruggedness is required. back to top features l short circuit rated 10s @ t c = 100c, v ge = 15v l high speed switching l low saturation voltage : v ce(sat) = 2.3 v @ i c = 15a l high input impedance l co-pak, igbt with frd : t rr = 70ns (typ.) back to top applications ac &dc motor controls, general purpose inverters, robotics, servo controls space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version file:///d|/fair/pdf/sgh15n120rufd.html (1 of 2) [10/7/02 11:15:36 am]
product folder - fairchild p/n sgh15n120rufd - discrete, short circuit rated igbt with diode back to top product status/pricing/packaging product product status pricing* inventory check & ordering package type leads packing method SGH15N120RUFDTU full production $6.73 purchase to-3p 3 rail * fairchild 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///d|/fair/pdf/sgh15n120rufd.html (2 of 2) [10/7/02 11:15:36 am]
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